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| IRFE024 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 VDSS ID(cont) RDS(on) FEATURES 60V 6.7A W 0.15W 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) * SURFACE MOUNT * SMALL FOOTPRINT * HERMETICALLY SEALED * DYNAMIC dv/dt RATING 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. LCC4 MOSFET GATE DRAIN SOURCE * AVALANCHE ENERGY RATING PADS * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec). 2 20V (VGS = 10V , Tcase = 25C) (VGS = 10V , Tcase = 100C) 6.7A 4.2A 27A 14W 0.11W/C 110mJ 5.5V/ns -55 to +150C 300C Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 570mH , RG = 25W , Peak IL = 14A , Starting TJ = 25C 3) @ ISD 14A , di/dt 140A/ms , VDD BVDSS , TJ 150C , Suggested RG = 7.5W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 02/00 IRFE024 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain - Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Static Drain - Source On-State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA Reference to 25C ID = 1mA VGS = 10V ID = 4.2A VGS = 10V ID = 6.7A VDS = VGS ID = 250mA VDS 15V IDS = 4.2A VGS = 0 VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 6.7A VDS = 0.5BVDSS VDD = 30V ID = 6.7A RG = 7.5W Min. 60 Typ. Max. Unit V 0.068 0.15 0.17 2 4.3 25 250 100 -100 640 340 69 9.0 2.0 6.0 26 5.0 13 14 70 37 45 6.7 27 2.3 200 1.9 Negligible 1.8 4.3 9.1 26 4 V / C W V S (E) mA nA pF nC ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 6.7A TJ = 25C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 6.7A TJ = 25C Reverse Recovery Charge 1 di / dt 100A/ms VDD 50V Forward Turn-On Time PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) THERMAL CHARACTERISTICS Thermal Resistance Junction - Case Thermal Resistance Junction - PC Board A V ns mC nH RqJC RqJPC C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 02/00 |
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